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| Data Sheet, Sept. 2002 BGA 622 Silicon Germanium W id e Ba n d L o w N o i s e A m p l i f ie r W ir e le ss Si l ic o n D is c r e t e s Never stop thinking. Edition 2002-09-13 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen, Germany (c) Infineon Technologies AG 2002. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA622 Data Sheet Revision History: Previous Version: Page 5 1-9 2002-09-13 2002-08-08 Subjects (major changes since last revision) Max. RF input power added Preliminary status removed For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com Silicon Germanium Wide Band Low Noise Amplifier BGA622 Features * High gain, |S21|2=14.8 dB at 1.575 GHz |S21|2=13.9 dB at 1.9 GHz |S21|2=13.3 dB at 2.14 GHz |S21|2=12.7 dB at 2.4 GHz * Low noise figure, NF=1.1 dB at 2.14 GHz * Operating frequency range 0.5 - 6 GHz * Typical supply voltage: 2.75 V * On/Off - Switch * Output-match on chip, input pre-matched * Low part count * 70 GHz fT - Silicon Germanium technology Applications 3 4 2 1 VPS05605 * LNA for GSM, GPS, DCS, PCS, UMTS, Bluetooth, ISM and WLAN Description Vcc,4 In,1 Out,3 On/Off 20 kOhm GND,2 The BGA622 is a wide band low noise amplifier, based on Infineon Technologies' Silicon Germanium Technology B7HF. In order to provide the LNA in a small package the out-pin is simultaneously used for RF out and On/Off switch. This functionality can be accessed using a RF-Choke at the Out pin, where a DC level of 0 V or an open switches the device on and a DC level of Vcc switches the device off. While the device is switched off, it provides an insertion loss of 20 dB together with a high IIP3 up to 18 dBm. ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BGA622 Data Sheet Package SOT343 Marking BRs 4 Chip T0535 2002-09-13 BGA622 Maximum Ratings Parameter Voltage at pin Vcc Voltage at pin Out Current into pin In Current into pin Out Current into pin Vcc RF input power Total power dissipation, TS < 139 C1) Junction temperature Ambient temperature range Storage temperature range Thermal resistance: junction-soldering point 1) Symbol Vcc VOUT IIN IOUT IVcc PIN Ptot Tj TA TSTG Rth JS Value 3.5 4 0.1 1 10 6 35 150 -65 ... +150 -65 ... +150 300 Unit V V mA mA mA dBm mW C C C K/W TS is measured on the ground lead at the soldering point Note: All Voltages refer to GND-Node Electrical Characteristics at TA=25C (measured according to fig. 1) Vcc=2.75 V, Frequency=1.575 GHz, unless otherwise specified Parameter Insertion power gain Insertion power gain (Off-State) Input Return Loss (On-State) Output Return Loss (On-State) Noise Figure (ZS=50W) Input Third Order Intercept Point (On-State) Df=1MHz, PIN=-28dBm Input Third Order Intercept Point1) (Off-State) Df=1MHz, PIN=-8dBm Input Power at 1dB Gain Compression Total Device Off Current, VCC=2.75V, Vout=VCC Total Device On Current, VCC=2.75V 1) Symbol |S21|2 |S21| 2 min. typ. 14.8 -24 6 12 1.05 0 18 -16.5 260 5.8 max. Unit dB dB dB dB dB dBm dBm dBm A mA RLIN RLOUT F50W 1) IIP3 IIP3 P-1dB Itot-off Itot-on IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 W from 0.1 to 6 GHz Data Sheet 5 2002-09-13 BGA622 Electrical Characteristics at TA=25C (measured according to fig. 1) Vcc=2.75 V, Frequency=2.14 GHz, unless otherwise specified Parameter Insertion power gain Insertion power gain (Off-State) Input Return Loss (On-State) Output Return Loss (On-State) Noise Figure (ZS=50W) Input Third Order Intercept Point1) (On-State) Df=1MHz, PIN=-28dBm Input Third Order Intercept Point1) (Off-State) Df=1MHz, PIN=-8dBm Input Power at 1dB Gain Compression 1) Symbol |S21|2 |S21| 2 min. typ. 13.3 -20 8 10 1.1 3 18 -13 max. Unit dB dB dB dB dB dBm dBm dBm RLIN RLOUT F50W IIP3 IIP3 P-1dB IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 W from 0.1 to 6 GHz DC, 2.75V Out, 50 W DC, 2.75V Out 47pF (DC-Block) 150pF 150pF RFC On/Off Switch DC, 2.75V In, 50 W 2.2nH (for improved input match) 47pF (DC-Block) Figure 1 S-Parameter Test Circuit (loss-free microstrip test-fixture) In Figure 2 Application Circuit Data Sheet 6 2002-09-13 BGA622 Power Gain |S | , G = f(f) 21 ma V = 2.75V, I = 5.8mA CC tot-on 25 2 Off Gain |S | = f(f) 21 V = 2.75V, V = 2.75V, I CC OUT 0 2 tot-off = 0.3mA -5 20 Gma -10 |S21|2, Gma [dB] 15 |S21|2 |S |2 [dB] -15 -20 21 -25 10 -30 5 -35 -40 0 0 1 2 3 4 5 6 -45 0 1 2 3 4 5 6 Frequency [GHz] Frequency [GHz] Reverse Isolation |S | = f(f) 12 V = 2.75V, I = 5.8mA CC tot-on 0 Matching |S |, |S | = f(f) 11 22 V = 2.75V, I = 5.8mA CC tot-on 0 -2 -4 -5 S11 S22 -10 -6 -8 -15 |S |, |S | [dB] 0 1 2 3 4 5 6 |S12| [dB] -20 -10 -12 -14 -16 -18 -20 -30 -35 -40 11 -25 22 -22 -24 0 1 2 3 4 5 6 -45 Frequency [GHz] Frequency [GHz] Data Sheet 7 2002-09-13 BGA622 Stability K, B = f(f) 1 V = 2.75V, I = 5.8mA CC tot-on 4 Noise Figure F = f(f) V = 2.75V, I = 5.8mA, Z = 50 CC tot-on S 1.8 1.7 3.5 K 3 1.6 1.5 2.5 1.4 2 F [dB] B1 0 1 2 3 4 5 6 K, B 1 1.3 1.2 1.1 1.5 1 1 0.5 0.9 0.8 0 1 2 3 4 5 6 0 Frequency [GHz] Frequency [GHz] Input Compression Point P = f(V ) Device Current I = f(T , V ) -1dB CC tot-on A CC f = 2.14GHz, T = -40 ... +85C V = parameter in V A CC -11 8.5 3.4 -11.5 8 3.2 7.5 -12 P-1dB [dBm] Itot-on [mA] 7 3 -12.5 6.5 2.8 -13 6 2.6 -13.5 5.5 -14 2.6 2.8 3 3.2 3.4 5 -40 -20 0 20 40 60 80 VCC [V] TA [C] Data Sheet 8 2002-09-13 BGA622 Device Current I = f(V , T ) tot-on CC A T = parameter in C A 8.5 Power Gain |S | = f(T , V ) 21 A CC f = 2.14GHz, V = parameter in V CC 15 2 8 14.5 7.5 14 [mA] |S | [dB] 7 tot-on 13.5 2 6.5 I 21 3.4 13 6 -40 20 5.5 3 12.5 85 5 2.6 2.8 3 3.2 3.4 12 -40 -20 0 20 40 60 2.6 80 VCC [V] TA [C] Power Gain |S | = f(V , T ) 21 CC A f = 2.14GHz, T = parameter in C A 15 2 Package Outline 2 0.2 14.5 B 0.20 3 M 0.9 0.1 B 0.1 max A 1.3 0.1 4 14 -40 1 2 |S21|2 [dB] 13.5 0.3 +0.1 0.6 +0.1 0.20 0.15 +0.1 -0.05 M A GPS05605 20 13 12.5 85 12 2.6 2.8 3 3.2 3.4 VCC [V] Data Sheet 9 2002-09-13 1.25 0.1 2.10.1 +0.2 acc. to DIN 6784 |
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